eGaN technology has been in mass production for more than a decade, accumulating billions of hours of successful field experience in automotive applications, such as lidar (Light Detection and Ranging) and radar for autonomous vehicles, 48 V – 12 V DC-DC converters for mild hybrid power, ultra-high fidelity infotainment systems, and high-intensity headlamps for trucks.
This EPC2219 has completed rigorous automotive AEC Q101 qualification testing including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests. This GaN device will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
In addition to lidar in demanding automotive applications, the EPC2219, a 65 V, 3.3 Ω, eGaN FET with integrated reverse gate clamp diode and tiny 0.81 mm2 footprint is perfectly suited for driving GaN FETs in radar and ultrasonic sensors, satellite reaction wheels, high frequency DC-DC conversion, wireless power, and class-D audio.
To complete AEC Q101 testing, EPC’s eGaN FETs undergo rigorous environmental and bias-stress testing. Of note is that EPC’s wafer level chip-scale (WLCS) packaging pass all the same testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability. eGaN devices passing AEC Q101 testing are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.
EPC’s CEO and co-founder Alex Lidow notes, “This new automotive product is the latest addition to a growing family of EPC transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety.”
Price and Availability
The EPC2219 eGaN FET is priced at 2.5K u/reel at $0.54 each and is available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost-efficiency.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.