Continuing its progress in accelerating the adoption of gallium-nitride
(GaN)-on-silicon semiconductors in power markets, leading GaN innovator Exagan
has opened a new Power Solutions Center in Toulouse, France, to extend
its applications support and market reach in wide-ranging,
customer-specific end products. The opening of the best-in-class
facility, which is operating in close collaboration with technology
partner CEA
Tech, follows the launch of Exagan’s first GaN applications center
in Taiwan
last October.
The Toulouse facility provides customers with new
application-development and product-validation capabilities using highly
specialized electronic equipment. It also enables Exagan to master new
architectures for GaN solutions while also boosting power-conversion
efficiencies in current topologies.
Exagan is exhibiting its versatile GaN-based product portfolio at this
week’s PCIM
Europe conference in Germany. The company is showcasing the
performance of its G-FET™ power transistors in applications such as
65-watt USB PD 3.0 power chargers and power factor correction (PFC)
ranging from 300 watts up to 1.5 kilowatts for next-generation data
centers.
Exagan’s technology and products are designed to offer customers the
best value in device performance, robustness and ease of integration
with existing platforms. G-FET power transistors can be fabricated in
existing 200-mm CMOS wafer fabs, enabling a multi-source supply, easy
scalability and optimal cost/performance benefits.
With its fab-lite business model, Exagan offers complete control of GaN
technology integration from starting materials to full implementation in
end products, enabling product optimization and volume manufacturing.
The company’s product portfolio covers a wide range of power levels and
applications, from small fast-charging systems, data centers and onboard
automotive chargers up to fast-charging stations for electric vehicles.
“Building on a robust GaN technology and product portfolio, Exagan is
now deploying GaN Power Solutions Centers in Europe and Asia to work
closely with customers. Our goal is to deliver the best functionality
and value by optimizing GaN devices’ industry-leading balance of power
density, power efficiency, reliability and system costs,” said Frédéric
Dupont, president and CEO of Exagan.
The market for GaN in power electronics is projected to increase at a
compound annual growth rate (CAGR) of 93 percent by 2023, according to Yole
Développement.
Visit Exagan’s exhibit
at PCIM Europe in booth #637, Hall 9 to see the company’s G-FET power
transistors, G-DRIVE™ intelligent system-in-a-package (SiP) solutions
and evaluation modules.
About Exagan
Founded in 2014 with support from CEA-Leti and Soitec, Exagan is
dedicated to accelerating the power-electronics industry’s transition
from silicon-based technology to GaN-on-silicon technology, enabling
smaller and more efficient electrical converters. Its GaN power switches
are designed for manufacturing in standard 200-mm wafer fabs to provide
high-performance, high-reliability products through a robust supply
chain. Applications encompass smart homes, IT electronics, industrial
and automotive. Strategic partners include X-FAB
Silicon Foundries, CEA-Leti
and TÜV
NORD GROUP. Exagan is based in Grenoble and has facilities in
Toulouse, France, and Taipei, Taiwan. For more information, visit www.exagan.com.
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