Press release

Transphorm President & Co-Founder, Dr. Primit Parikh, Interviewed by The Wall Street Resource

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Transphorm, Inc. (“Transphorm” or the “Company”) (OTCQB: TGAN) —a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, announced today the Company’s President & Co-founder, Dr. Primit Parikh, was recently interviewed by Jeff Kone from The Wall Street Resource.

A webcast replay of the interview is available at: https://thewallstreetresource.com/webcasts/

In the interview, Dr. Parikh highlighted that Transphorm is a recognized leader in gallium nitride (GaN) power conversion with over 1,000 patents and patent applications worldwide. The total addressable market for GaN is expected to nearly double and exceed $3 billion within 5 years, driven by expanded adoption in several rapidly growing end market applications such as automotive EV and charging, power adapters for fast charging 5G phone, as well as data center and cloud infrastructure. As part of his comments, he detailed the market success of Transphorm’s comprehensive product portfolio of GaN devices from sub 100 watt to 10 kilowatt power levels, all of which exhibit best-in-class performance with the highest quality and reliability in the industry. The Company has established strong strategic partnerships with Marelli, Nexperia, Yaskawa and Fujitsu – and today, Transphorm is successfully ramping shipments for its growing number of design and contract wins across an expanding base of commercial and government customers.

Founded in 2007, Transphorm is a global semiconductor company and a pioneering technology leader in wide-bandgap GaN power electronic devices for high-voltage power conversion applications. The Company’s products target power applications ranging from 30 watt to 300 watt (power adapters and chargers) to multi-kilowatt applications for chargers and converters used across high-growth end markets including data center, communications infrastructure, industrial and automotive. Transphorm’s GaN-on-silicon FET products stand out in the industry due to their capability to withstand higher voltage, starting at a 650 volt rating and reaching up to 900 volts and with 1200 volt products currently under development.

Investors and media are encouraged to visit Transphorm’s website at www.transphormusa.com to learn and access more information about the Company as well as request email notifications for future news, events and updates.

About Transphorm, Inc.

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa.

Forward-Looking Statements

This press release and the referenced interview may contain forward-looking statements (including within the meaning of Section 21E of the United States Securities Exchange Act of 1934, as amended, and Section 27A of the United States Securities Act of 1933, as amended) concerning the Company, expected listing and trading on OTCQB, the Company’s technology and future anticipated growth. Forward-looking statements generally include statements that are predictive in nature and depend upon or refer to future events or conditions, and include words such as “may,” “will,” “should,” “would,” “expect,” “plan,” “believe,” “intend,” “look forward,” and other similar expressions among others. Statements that are not historical facts are forward-looking statements. Forward-looking statements are based on current beliefs and assumptions that are subject to risks and uncertainties and are not guarantees of future performance. Actual results could differ materially from those contained in any forward-looking statement as a result of various factors, including, without limitation: risks related to Transphorm’s operations, such as additional financing requirements and access to capital; competition; the ability of Transphorm to protect its intellectual property rights; and other risks set forth in the Company’s filings with the Securities and Exchange Commission. Except as required by applicable law, the Company undertakes no obligation to revise or update any forward-looking statement, or to make any other forward-looking statements, whether as a result of new information, future events or otherwise.